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An improved packaging technology for RF power transistors

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4 Author(s)
McCarthy, S. ; SEMELAB plc, Lutterworth, UK ; Smith, P. ; Walker, J. ; Padfield, N.

This paper presents an improved packaging technology for RF power transistors that is beryllia-free and which halves the thermal resistance compared with the conventional approach. This new technology also reduces the source inductance and increases the gain.

Published in:

Microwave Symposium Digest, 2005 IEEE MTT-S International

Date of Conference:

12-17 June 2005

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