By Topic

A highly integrated dual band receiver IC for DAB

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Yen-Horng Chen ; SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan ; Shin-Fu Chen ; Ching-Feng Lee ; Kai-Cheung Juang
more authors

A dual band receiver IC for digital audio broadcasting (DAB) is described in this paper. The chip integrates most of the functions necessary to receive and down convert DAB L-Band (1452 ∼ 1492MHz) and Band3 (174-240 MHz) signals for further baseband processing, including two variable gain LNAs, mixers, VGA, IF amplifiers, L-Band PLL, and Band3 VCO. The overall Band3 receiver gain is 92dB and NF is 4.5dB. L-Band receiver gain is 91dB and NF is 8.9dB. In both bands, gain control ranges are over 84dB and THD remains above 30dBc up to input levels of -14dBm. The linearity and dynamic range of this system can be improved by using an external attenuator that has 20dB variable attenuation. Two AGC stages are implemented in this receiver. With the reference-current-based, programmable AGC design, this receiver provides 8dB range to optimize output level to match the dynamic range of the following A/D converter. The prescalar used in L-band PLL realizes a programmable divide-by-multi-divisor function, 2n - 2, 2n - 1, 2n, and 2n + 1, by utilizing conventional divide-by-4/5 stage with slow and simple logic timing. This circuit was fabricated in TSMC 0.35 μm SiGe process with 3.3V power supply. It consumes 88mA and 65mA for L-Band and Band3 mode, respectively.

Published in:

Microwave Symposium Digest, 2005 IEEE MTT-S International

Date of Conference:

12-17 June 2005