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The paper describes a new class of spin transistors referred to as spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The fundamental and feasible device structures and the theoretically predicted device performance are presented. The spin MOSFETs not only can exhibit significant magnetotransport effects such as large magnetocurrent, but also can satisfy important requirements for integrated-circuit applications such as high transconductance, low power-delay product, and low off-current. In particular, the additional spin-related degree of freedom in controlling output currents makes the spin MOSFETs attractive building blocks for a nonvolatile memory cell and reconfigurable logic gates on spin-electronic integrated circuits.