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Silicon spin diffusion transistor: materials, physics and device characteristics

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5 Author(s)
Dennis, C.L. ; Clarendon Lab., Oxford Univ., UK ; Tiusan, C.V. ; Gregg, J.F. ; Ensell, G.J.
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The realisation that everyday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on giant magnetoresistance and tunnel magnetoresistance, the technology has advanced to consider three-terminal devices that aim to combine spin sensitivity with a high current gain and a large current output. These devices require both efficient spin injection and semiconductor fabrication. In the paper, a discussion is presented of the design, operation and characteristics of the only spin transistor that has yielded a current gain greater than one in combination with reasonable output currents.

Published in:

Circuits, Devices and Systems, IEE Proceedings -  (Volume:152 ,  Issue: 4 )