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Effect of deuterium anneal on thin gate oxide reliability

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4 Author(s)
Cellere, G. ; Dept. of Inf. Eng., Padova Univ., Italy ; Paccagnella, A. ; Valentinr, M.G. ; Alessandri, M.

Several process steps (in particular, those requiring the use of plasma) can lead to severe oxide damage. To reduce the latter, a high temperature anneal is usually performed at the end of the manufacturing process. We are investigating the use of deuterium instead of hydrogen for this anneal step. Anneal in deuterium results in improved passivation of the process-induced damage, and in lower degradation of devices during subsequent electrical stress.

Published in:

Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on

Date of Conference:

9-11 May 2005

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