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Reduction of plasma-induced damage during intermetal dielectric deposition in high-density plasma

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9 Author(s)
Kyung-Mun Byun ; Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin, South Korea ; Do-Hyung Kim ; Yong-Won Cha ; Sang-Hyeon Lee
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We have attempted to reduce the plasma-induced damage to the thin gate oxides during intermetal dielectric (IMD) gap-fill process by high-density plasma (HDP) chemical vapor deposition (CVD). It was revealed that the optimization of preheating step could reduce the damage. The H2-based HDP CVD process was also effective in reducing plasma-induced damage compared with the conventional He-based process. The gate oxide failure was reduced remarkably at the low deposition temperatures less than 400°C. Both the significant damage reduction and the excellent gap-fill performance were achieved by the adoption of the phosphorus silicate glass (PSG) using the low temperature H2-based HDP CVD technique.

Published in:

Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on

Date of Conference:

9-11 May 2005

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