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Charging damage and SOI

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1 Author(s)
Hook, T.B. ; IBM Microelectron., Essex Junction, VT, USA

SOI technologies offer the highest possible performance in today's silicon spectrum, and are used for the very fastest processor requirements. In addition to the high speed achievable with this technology, there is also unusually high robustness against inline charging damage. In this paper, we review data and theories pertinent to SOI charging immunity and design rules.

Published in:
Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on

Date of Conference: 9-11 May 2005

Page(s):
87 - 90
Print ISBN:
0-7803-9081-4
INSPEC Accession Number:
8531357
Digital Object Identifier :
10.1109/ICICDT.2005.1502599
Product Type:
Conference Publications

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