By Topic

Design of anodically oxidized metal oxide films as a gas sensor material

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hyodo, T. ; Dept. of Mater. Sci. & Eng., Nagasaki Univ., Japan ; Ohoka, J. ; Shimizu, Y. ; Egashira, M.

H2 sensing properties of an anodically oxidized Nb2O5 film coupled with a noble metal electrode (M/Nb2O5, M:Au, Pt and Pd) have been investigated under various operating conditions. Among the sensors tested, the Nb2O5 film with a Pd electrode, which was prepared by anodic oxidation in an aqueous solution of 0.5 M H2SO4, showed the highest H2 response, and the logarithmic sensor current under a forward bias was proportional to the logarithmic H2 concentration. The current-voltage characteristics of the Pd/Nb2O5 sensor at 100°C apparently showed a typical rectifying function of a metal-semiconductor junction, which was formed between the Pd electrode and the Nb2O5 thin film, especially in H2 balanced with dry air. The H2 response property was improved when it was operated under a forward bias above 150°C. Furthermore, it was confirmed that even at 28°C the Pd/Nb2O5 could respond to H2 in dry air.

Published in:

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on  (Volume:2 )

Date of Conference:

5-9 June 2005