By Topic

High voltage thin film transistors integrated with MEMS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Chow, E.M. ; Palo Alto Res. Center, CA, USA ; Lu, Jeng-Ping ; Ho, J. ; Chinwen Shih
more authors

The integration of high-voltage thin film transistors with a released MEMS process onto the same substrate is demonstrated. High voltage transistors capable of over 300 V actuation voltage are used to actuate released metal cantilevers and membranes with a low temperature fabrication process (<350 °C) on glass substrates. This demonstration is an important step towards realizing MEMS arrays with integrated addressable drivers for applications which require high voltage, such as electrostatic MEMS devices on low temperature substrates (e.g. glass or flex). High voltage thin film transistors (HVTFT) provide the unique property of easily controlling high voltage (50 V to 300 V) using a standard input voltage range (0 V to 20V). To our knowledge this is the first demonstration of integrated HVTFT actuating released MEMS structures.

Published in:

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on  (Volume:2 )

Date of Conference:

5-9 June 2005