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Fabrication and dielectric properties of SCT thin film by RF sputtering method

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9 Author(s)
Kim, J.S. ; Dept. of Electr. Eng., Kwangwoon Univ., Seoul, South Korea ; Cho, C.N. ; Shin, C.G. ; Oh, Y.C.
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The (Sr0.9Ca0.1)TiO3(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/SiO2/Si) using RF magnetron sputtering method. The composition of SCT thin film were closed to stoichiometry (1.081 in A/B ratio). The optimum annealing temperature of SCT thin film was 600[°C]. The dielectric constant depending on the annealing temperature was shown to be the great 146 at 600[°C]. The temperature coefficients of capacitance exhibit very stable values below ±4[%] in the temperature range of -80 ∼ 90[°C]. The temperature properties of the dielectric loss have a stable value within 0.02. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].

Published in:

Electrical Insulating Materials, 2005. (ISEIM 2005). Proceedings of 2005 International Symposium on  (Volume:3 )

Date of Conference:

5-9 June 2005