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An 8 Gb multi-level NAND flash memory is fabricated in a 63 nm CMOS technology with shallow trench isolation. The cell and chip sizes are 0.02 /spl mu/m/sup 2/ and 133 mm/sup 2/, respectively. Performance improves to 4.4 MB/s by using the 2/spl times/ program mode and by decreasing the cycle time from 50 ns to 30 ns. This also improves the read throughput to 23 MB/s.
Published in:
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Date of Conference: 10-10 Feb. 2005
- Page(s):
- 46 - 47 Vol. 1
- ISSN :
- 0193-6530
- Print ISBN:
- 0-7803-8904-2
- INSPEC Accession Number:
- 8643452
- Conference Location :
- San Francisco, CA
- Digital Object Identifier :
- 10.1109/ISSCC.2005.1493861
- Product Type:
- Conference Publications
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