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Comparison of hydrogenated amorphous silicon germanium and nanocrystalline silicon for multijunction solar cells: pros, cons, and status

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4 Author(s)
J. Yang ; United Solar Ovonic Corp., Troy, MI, USA ; Baojie Yan ; Guozhen Yue ; S. Guha

A comparison is made of hydrogenated amorphous silicon germanium (a-SiGe:H) and hydrogenated nanocrystalline silicon (nc-Si:H) for use in the bottom cell of a multijunction structure. In our laboratory, an initial active-area cell efficiency of 14.6% has been achieved in both a-Si:H/a-SiGe:H/a-SiGe:H and a-Si:H/a-SiGe:H/nc-Si:H triple-junction structures. Their light-soaked stabilized efficiencies are also similar. Pros, cons, issues, and status for using these two low bandgap absorber materials in multijunction structures are presented.

Published in:

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.

Date of Conference:

3-7 Jan. 2005