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The analysis of capacitive pressure sensors with large deflection

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4 Author(s)
Tong, Lijun ; Dept. of Electr. Eng. & Appl. Phys., Case Western Reserve Univ., Cleveland, OH, USA ; Jen-Tai Hsu ; Ko, W.H. ; Xiaoyi Ding

A set of analytical equations for the calculation of large deflection of square or rectangular boron-doped P/sup +/-Si diaphragms under pressure is obtained. Based on these equations and the mechanical properties of the Si thin diaphragm, such as the residual stresses, direct and shearing stresses, and Young's modulus, a computer program using a personal computer was developed to calculate the deformation of the boron-doped P/sup +/-Si thin diaphragm, and the capacitance and sensitivity of a silicon capacitive sensor. A calculated curve for capacitive sensors with a thin silicon diaphragm agrees well with the measured results of those sensors. This simulation can be a simple but useful tool for the design of a large-deformation silicon capacitive pressure sensor.<>

Published in:

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Date of Conference:

24-27 June 1991