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Preparation and properties of CIGS and CIGSS thin films using DESe as a selenium source and H2S as sulfur source

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7 Author(s)
A. H. Jahagirdar ; Florida Solar Energy Center, Cocoa, FL, USA ; N. G. Dhere ; S. S. Kulkarni ; A. A. Kadam
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Cu(In1-xGax)(Se1-ySy)2 (CIGSS) thin films were prepared at the FSEC photovoltaic materials lab in two steps. The first step consisted of deposition of CuGa-In precursors using DC magnetron sputtering on molybdenum back contact. The second step involved selenization/sulfurization of these precursors. Selenization was carried out using diethylselenide (DESe) as a selenium source and H2S as sulfur source. CIGSS thin-film solar cells were completed by depositing n-type CdS layer by chemical bath deposition (CBD), ZnO/ZnO:Al window bilayer by RF magnetron sputtering and Ni-AI front contacts by e-beam evaporation. This paper describes the new DESe set-up developed at FSEC PV Materials Lab and preparation and properties of CuIn1-xGaxSe2 (CIGS) and CIGSS thin films.

Published in:

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.

Date of Conference:

3-7 Jan. 2005