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High frequency noise in fine line NMOS field effect transistors

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1 Author(s)
Jindal, R.P. ; AT&T Bell Laboratories, Murray Hill, New Jersey

Noise mechanisms that limit the high frequency performance of submicron channel length NMOS FETs are presented. We develop here a physical understanding of the various noise mechanisms and evaluate the impact of device structure on them. This involves a review of some already published work and an examination of some new results.

Published in:

Electron Devices Meeting, 1985 International  (Volume:31 )

Date of Conference: