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Characterization of Si/SiO2interface degradation due to hot-carrier injection

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2 Author(s)
Sabnis, Anant G. ; AT&T Bell Laboratories, Allentown, PA ; Nelson, J.T.

Short-channel length MOSFETs fabricated by various n-channel Si-gate technologies have been subjected to dc and pulse aging conditions. The degradation due to injection of hot-holes is found to be a self- limiting process, dictated by the dynamics of hole-trapping and their conversion to fast-states.

Published in:

Electron Devices Meeting, 1985 International  (Volume:31 )

Date of Conference:

1985