By Topic

High capacitance ultra-thin Ta2O5dielectric film applied to a high-speed bipolar memory cell

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Y. Nishioka ; Hitachi Ltd., Kokubunji, Tokyo, Japan ; N. Homma ; H. Shinriki ; K. Mukai
more authors

A new capacitor technology, with extremely thin Ta2O5film deposition and weakspot oxidation, is developed to realize high capacitance and high reliability. The Ta2O5film was reactively sputtered and followed by the weakspot oxidation. The oxidation improves the breakdown voltage by selectively oxidizing Si surface at weakspots where Ta2O5is locally thin. Consequently it reduces the defect density of the Ta2O5capacitor with least reduction of capacitance. This technology is based on a newly discovered fact that Ta2O5film below 200 Å remains in amorphous state with high dielectric breakdown strength even after heat treatments up to 1000 °C. Application of the Ta2O5capacitor to a switched-load resistor memory makes it possible to reduce the memory cell area to one third that of a conventional one. The memory provides high speed operation, and has sufficient soft error immunity.

Published in:

Electron Devices Meeting, 1985 International  (Volume:31 )

Date of Conference: