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Hi-CMOS III (1.3µm CMOS) technology is described. The basic approach is the 2/3 scaling of Hi-CMOS II (2µm CMOS) with constant voltage. Lightly Doped Drain (LDD) NMOS, and newly developed Buried Channel Lightly Doped Drain (BCLDD) PMOS, with polycide gate are adopted to reduce short channel effects and delays in interconnection lines. Both NMOS and PMOS can be used at the gate length of 1.2µm. Spacers for LDD and tapered contact holes have improved the coverage of aluminum layer significantly. Also post-contact-doping is adopted to allow the overlap of contact holes and diffusion edges, and to reduce contact resistance. These process integration result in simple and high performance Hi-CMOS III technology.