By Topic

1600V Power MOSFET with 20ns switching-speed

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yoshida, I. ; Hitachi Limited, Kokubunji, Tokyo ; Okabe, Takeaki ; Iijima, T. ; Ohtaka, S.
more authors

A high-power MOSFET has been developed which has a breakdown voltage as high as 1600V, a 5A current capability and a switching time as fast as 20ns. This device has a field limiting ring structure for junction termination, and this structure was optimized by a sophisticated two-dimensional numerical analysis. To increase current capabilities, an optimized cell structure was designed based on experimental data. Furthermore, an ultra-high switching speed was obtained, through reducing the input capacitance of the new gate structure to half that for a conventional one.

Published in:

Electron Devices Meeting, 1983 International  (Volume:29 )

Date of Conference: