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A high-power MOSFET has been developed which has a breakdown voltage as high as 1600V, a 5A current capability and a switching time as fast as 20ns. This device has a field limiting ring structure for junction termination, and this structure was optimized by a sophisticated two-dimensional numerical analysis. To increase current capabilities, an optimized cell structure was designed based on experimental data. Furthermore, an ultra-high switching speed was obtained, through reducing the input capacitance of the new gate structure to half that for a conventional one.