Referenced Items are not available for this document.
This paper describes a compact model for bipolar transistors which includes a unified representation of quasi-saturation effects. The formulation of this model has been verified with results from physical simulations of a high voltage bipolar transistor. Excellent agreement between detailed physical simulations and the compact model is observed over a wide range of operating conditions for dc and ac small-signal characteristics.
Published in:
Electron Devices Meeting, 1983 International
(Volume:29
)
Date of Conference: 1983
- Page(s):
- 75 - 78
- Digital Object Identifier :
- 10.1109/IEDM.1983.190444
- Product Type:
- Conference Publications
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