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The integrated Injection Logic or Merged Transistor Logic (I2L/MTL) techniques have led to attractive VLSI products, such as 16 bit microprocessors with 600 logic gates/mm2of 3 ns delay or 18 k bit static RAM's of 30 ns access. Even 64 k SRAM's of 25 ns access are feasible in today's manufacturing processes. Moreover, recent technology advancements significantly extend the potential of I2L/MTL. Polysilicon self-alignment techniques enable logic circuit delays in the subnanosecond range, and deep-groove dielectric isolation schemes considerably enhance the density and performance of static RAM's in conjunction with new cell design techniques.