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An In0.53Ga0.47As p-channel MOSFET with plasma-grown native oxide insulated gate

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6 Author(s)
Liao, A.S.H. ; Bell Laboratories, Holmdel, NJ, USA ; Tell, B. ; Leheny, R.F. ; Nahory, R.E.
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We describe the operation of an In0.53Ga0.47As p-channel inversion mode MOSFET with plasma grown native oxide insulated gate. This device exhibits a transconductance of 4 mS/mm and an effective channel mobility of more than 50% of the bulk hole mobility. This device is the first demonstration of a native oxide insulated gate MOSFET in the In1-xGaxAsyP1-ymaterial system.

Published in:

Electron Device Letters, IEEE  (Volume:3 ,  Issue: 6 )