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N-type polysilicon was used for resistor load of high performance bipolar memory. Resistance area and contact area of polysilicon were made by low and high dose As+implantation, respectively. Resistance of polysilicon load was formed with standard deviation of 10% in wafer by controlling lateral diffusion of As from contact area to high resistance area of polysilicon load. A 256 bit ECL RAM with polysilicon resistor load of 9.8 kΩ was fabricated with a cell size of 1870 µm2Typical address access time of 4.6 ns and power dissipation of 340 mW were successfully obtained.