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Optimization of self-aligned silicon MESFETs for VLSI at micron dimensions

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2 Author(s)
Darley, H.M. ; Texas Instruments Incorporated, Dallas, Texas ; Houston, T.W.

This paper discusses the experimental optimization of the structural parameters of MESFET devices using a new self-aligned MESFET structure that incorporates a source-drain extension. Detail device characteristics as a function of gate length and width are presented. Ring oscillator measurements have demonstrated speed-power products as low as 1.5 femtoJoules.

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Electron Devices Meeting, 1980 International  (Volume:26 )

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