Electrooptic effect in CdTe at 23.35 and 27.95 microns

The unlamped electrooptic coefficient r
41
of high-purity CdTe has been measured at 23.35 and 27.95 micros in the far infrared. The values obtained for n
0
³
r
41
are 9.4 × 10
^-11
m/V at 23.35 µ and 8.1 × 10
^-11
m/V at 27.95 µ. Using previously reported values for n
0
, the electrooptic coefficients are found to be 5.5 × 10
^-12
m/V at 23.35 µ and 5.0 × 10
^-12
m/V at 27.95 µ. These measurements extend the region of observed electrooptic effect from 16 µ, previously obtained using GaAs, to 28 µ using CdTe.