By Topic

NiO modified thin films for gas monitoring

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Hotovy, I. ; Department of Microelectronics, Slovak University of Technology, Ikovicova 3, 812 19 Bratislava (Slovakia) ; Huran, J. ; Spiess, L. ; Gubisch, M.
more authors

In our contribution, we present the results concerning the Pt surface modification of nickel oxide thin films deposited by dc reactive magnetron sputtering. Pt very thin overlayers with a thickness of about 3 and 5 nm have been sputtered on the top of NiO samples. The surface structure and morphology of the samples have been analysed by XRD and by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. The electrical responses of the NiO-based sensors towards different H2 concentration (500-5000 ppm) have been also considered. The Pt modified NiO samples showed an enhancement of the response towards H2 as compared to the unmodified NiO sample. The thickness of the Pt thin layers seems also an important parameter in determining the properties of the NiO films as H2 sensors.

Published in:

Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on

Date of Conference:

17-21 Oct. 2004