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Thermal stability of ruthenium MOS gate electrodes

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8 Author(s)

In this paper, thermal stability o/metal-organics vapour deposited (MOCVD) Ru gate electrodes grown on atomic-layer deposited (ALD) Hf02 dielectric films have been analysed. As-deposited MOS capacitors were annealed in forming gas (10% H2 + 90% N2) at temperature range 430 - 590 °C for 30 min. MOS capacitors were analysed by high-frequency capacitance-voltage (G-V), conductance-voltage (G-V) and current voltage (I-V) measurements resulting density of oxide charge, Neff, density of interface states, Dii and leakage current density, Jleak respectively.

Published in:

Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on

Date of Conference:

17-21 Oct. 2004