Thermal stability of ruthenium MOS gate electrodes

In this paper, thermal stability o/metal-organics vapour deposited (MOCVD) Ru gate electrodes grown on atomic-layer deposited (ALD) Hf0
₂
dielectric films have been analysed. As-deposited MOS capacitors were annealed in forming gas (10% H
₂
+ 90% N
₂
) at temperature range 430 - 590 °C for 30 min. MOS capacitors were analysed by high-frequency capacitance-voltage (G-V), conductance-voltage (G-V) and current voltage (I-V) measurements resulting density of oxide charge, N
_eff
, density of interface states, D
_ii
and leakage current density, J
_leak
respectively.