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Removal of oxide ions from ruthenium oxide films by pill injection of nitrogen

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6 Author(s)

We used the Plasma Immersion Ion Implantation (PIII) technique to implant nitrogen into the rutile RuO2] as-deposited film structure. We investigated the crystallographic structure of deposited and implanted RuO2] film material by XRD measurements. XPS deep profile measurements showed compositional changes due to nitrogen implantation. We measured colour changes and nano-hardness of as-deposited films as , well as the films after implantation with nitrogen. We found changes in the film material after PIII process towards the metallic based Ru structure with decreasing nano-hardness along with changes in the colour properties of Ru films. Process can be use for removal of oxide ions from the RuO2] thin film structure,

Published in:

Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on

Date of Conference:

17-21 Oct. 2004