Cart (Loading....) | Create Account
Close category search window

Annealing behavior of low temperature grown GaAs investigated by raman spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)

The Low Temperature grown GaAs (LT GaAs) layers were studied by micro-Raman spectroscopy on ex situ annealed and as grown samples. For investigation of arsenic excess incorporation into LT GaAs the Raman spectroscopy have been employed by using two different excitation wavelengtlui. Raman measurements show that the La phonon of LT GaAs shifted down in frequency from the bulk GaAs for as grown and for annealed samples up to 550??C. Thi.s shift is related to the presence of ASGtJ antisile defects. After Ihe sample is annealed, the epilayer has Ihe same lattice constant as the substrate and the La phonon move closer to the bulk GaAs La phonon . The annealing behavior of LT GaAs layers can be evaluated from TO and La phonon. peaks ratio in Raman spectra and optimal annealing temperature 600"C for investigated samples was detennined from these measurements.

Published in:

Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on

Date of Conference:

17-21 Oct. 2004

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.