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Experimental study of the plateau-to-plateau transitions in the integer quantum hall effect in InGaAs/InP heterostructures

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3 Author(s)

We report on temperature scaling experiments on the plateau-to-plateau transitions in the integer quantum Hall effect in InO.53Ga0.47AS/lnP heterostructures. The scaling exponent for the transitions between the quantum Hall plateaus was found to have a value of K ~ 0.6-0.8. The obtained values are interpreted in terms of the relevant inelastic electron scattering mechanisms.

Published in:

Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on

Date of Conference:

17-21 Oct. 2004