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Applicability of the Burton-Cabrera-Frank model in the case of LPE growth of semiconductor compounds is limited due to restrictions imposed by the volume diffusion of constituent units through the melt. We model this phenomenon by introducing a growth rate dependent correction to the supersaturation. Relation between growth rate and supersaturation is then no longer explicit and can be solved using so-called causal diagrams. This technique also affords additional insights into the physics of the 'growth process. In particular, it reveals the presence of negative feedback and provides means to describe its junction in precise manner. Theoretical predictions are confronted with our experimental data on the growth of thick InP and InP:Nd layers.