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Role of indium in Ge/Pd/GaAs contact structure

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2 Author(s)

This article studies the role of indium in the contact metallization GelPdlGaAs. A three-layer metallization gets converted during the annealing process into a twolayer structure. The upper layer consists of germanium and part of palladium - probably the GePd phase and other possible compounds of Ge and Pd The second layer contains palladium and indium. Depending on the composition, there is mostly the InPd phase. Very slight reaction of indium with the substrate (creation of a ternary phase InGaAs) has been proved

Published in:

Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on

Date of Conference:

17-21 Oct. 2004

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