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Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition

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6 Author(s)
Qi-Yuan Wang ; Inst. of Semicond., Acad. Sinica, Beijing, China ; Wen-Juan Shen ; Jun Wang ; Jian-Hua Wang
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Quality ZnO films were successfully grown on Si(100) substrate by a low-pressure metal organic chemical vapor deposition method in the temperature range of 300-500°C using DEZn and N2O as precursor and oxygen source respectively. The crystal structure, optical properties and surface morphology of the ZnO films were characterized by X-ray diffraction, optical reflection and atomic force microscopy technologies. It was demonstrated that the crystalline structure and surface morphology of ZnO films strongly depend on the growth temperature.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004