Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition

Quality ZnO films were successfully grown on Si(100) substrate by a low-pressure metal organic chemical vapor deposition method in the temperature range of 300-500/spl deg/C using DEZn and N/sub 2/O as precursor and oxygen source respectively. The crystal structure, optical properties and surface morphology of the ZnO films were characterized by X-ray diffraction, optical reflection and atomic force microscopy technologies. It was demonstrated that the crystalline structure and surface morphology of ZnO films strongly depend on the growth temperature.