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300 mm silicon crystal growth and wafer processing

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3 Author(s)
Hailing Tu ; Nat. Eng. Res. Center for Semicond. Mater., Gen. Res. Inst. for Non-Ferrous Metals, Beijing, China ; Qigang Zhou ; Guohu Zhang

We have grown 300 mm silicon single crystals using a 28" hot zone with 200 kg charge size. The mechanical strength of silicon seeds was tested and a new style seed and chuck were developed for safer operation. Oxygen concentration and radial gradient (ORG) were controlled to ±2.5 ppma between 33 and 23 ppma and to less than 5% respectively. Crystal originated pit (COP) sizes were less than 0.15 μm. Wire saw technology has been used to slice the 300 mm wafers and the damage layer of the as-cut wafers investigated. The results show that wire sawn wafers have few defects. It has been found that rapid thermal annealing (RTA) can affect COP counts.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004