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Dependence of nitrogen incorporation of GaNAs alloys to growth conditions

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3 Author(s)
Sentosa, D. ; Nanyang Technol. Univ., Singapore ; Tang Xiaohong ; Chua Soo Jin

The influence of growth temperature, reactor pressure, and N/V ratio on the nitrogen composition of MOCVD-grown GaNAs epilayers was studied. With the same growth temperature and N/V ratio, a reactor pressure of 20 mbar increases the nitrogen composition of GaNAs samples by almost 30% compared to samples grown with a reactor pressure of 60 and 100 mbar. The highest nitrogen content achieved of the GaNAs alloy is 0.0235 with an N/V ratio of 0.805 and reactor pressure of 20 mbar. By studying the nitrogen composition, a reactor pressure of 20 mbar enhances the nitrogen content of GaNAs alloys.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004