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The influence of growth temperature, reactor pressure, and N/V ratio on the nitrogen composition of MOCVD-grown GaNAs epilayers was studied. With the same growth temperature and N/V ratio, a reactor pressure of 20 mbar increases the nitrogen composition of GaNAs samples by almost 30% compared to samples grown with a reactor pressure of 60 and 100 mbar. The highest nitrogen content achieved of the GaNAs alloy is 0.0235 with an N/V ratio of 0.805 and reactor pressure of 20 mbar. By studying the nitrogen composition, a reactor pressure of 20 mbar enhances the nitrogen content of GaNAs alloys.