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Simulation study of 1.2 kV 4H-SiC DIMOSFET structures

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5 Author(s)
Chen, L. ; Sch. of Eng., Univ. of Wales, Swansea, UK ; Guy, O.J. ; Jennings, M.R. ; Wilks, S.P.
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Numerical device simulations on a 4H-SiC 1.2 kV vertical MOSFET are presented. The TMA MEDICI device simulator was employed to carry out a characterization study of double implanted MOSFET (DIMOSFET) structures. Appropriate material parameters were adjusted for the 4H-SiC polytype used in this study. The simulations mainly focus on the reverse blocking voltage, threshold voltage, forward characteristics, and on state resistance evaluations. Optimized parameters are given for the specific designed structure.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004