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The properties of the native oxides on GaAs-based materials have been characterized. The n-channel depletion-mode GaAs MOSFETs with the liquid phase oxidized gate have been fabricated and characterized. The primary results show the stability and potential of the liquid phase oxidation method for application to GaAs-based devices. In addition, a new planarized shallow trench isolation technique, a simple self-align process and an oxidized AlGaAs gate for GaAs-based device applications using liquid phase oxidation method have been demonstrated.
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on (Volume:3 )
Date of Conference: 18-21 Oct. 2004