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MBE-based materials growth for high fT SiGe HBT

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11 Author(s)
Zhang Jing ; Nat. Labs of Analog Integrated Circuits, Chongqing, China ; Li Kaicheng ; Kibbel, H. ; Gruhle, A.
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In this paper, the technology of MBE-based materials growth for high cutoff frequency (fT) SiGe HBTs was described. To grow a high-performance SiGe/Si hetero-junction multiple-structure, technologies such as the doping of secondary implantation (DSI), low-temperature doping, and antimony (Sb) surface pre-deposition, have been presented in the course of molecular beam epitaxy (MBE). The cutoff frequency of a mesa SiGe HBT, which was developed by using a SiGe/Si hetero-junction multi-structure, reached 105 GHz. In addition, key technologies such as the wafer surface pre-treatment before epitaxial growth, the temperature control of SiGe layer growth, etc., were introduced in detail.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004

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