Cart (Loading....) | Create Account
Close category search window
 

Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Wang, Dong ; Art. Sci. & Technol. Center for Cooperative Res., Kyushu Univ., Fukuoka, Japan ; Ninomiya, Masaharu ; Nakamae, Masahiko ; Nakashima, Hiroshi

Interface states intensity (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si)/SiGe wafers using deep level transient spectroscopy (DLTS) and metal-oxide-semiconductor (MOS) transient capacitance (C-t) methods. The dependences of Nss and τg on St-Si thickness (dSi) and Ge fraction (Ge%) were shown clearly. By the same gate film fabrication and electrical measurements for a bulk Si MOS, the values of Nss and τg of St-Si MOS are similar to those of bulk Si MOS, showing good wafer quality.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.