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Method of LTPS TFT with fin-like structure and its channel self-selective enhanced crystallization

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8 Author(s)
Huaxiang Yin ; N-Team, Samsung Adv. Inst. of Technol., Gyeonggi-Do, South Korea ; Xianyu Wenxu ; Jisim Jung ; Cho, H.
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Forming high-quality Si film on glass with low cost has become one of key challenges in making high performance low temperature poly-Si TFT (LTPS) for future SOG applications. A new method of applying a finlike channel structure into the LTPS TFT is proposed. During the simple ELC process, the geometry size difference between the source/drain (S/D) and the channel region produces a new effect of self-selective enhanced crystallization on the fin-like channel. Via this effect, a high quality poly-Si with larger grain, smoother surface and more compact grain arrangement is achieved. Meanwhile, just like its precursor the SOI FinFET, the fin-like LTPS TFT structure demonstrates a sharp subthreshold slope, and higher transconductance and short channel effect immunity than the conventional thin film device. This was confirmed by ISE simulation.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004