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Radiation-stable photovoltaic converters based on In2Te3-type semiconductors

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5 Author(s)
Gurevich, Y. ; Departamento de Fisica, CINVESTAV-IPN, Apdo. Postal 14-740, 07000 Mexico, D.F., Mexico ; Volovichev, I. ; Logvinov, H. ; Cruz-Irisson, M.
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The perspective of use of radiation-stable semiconductor compounds with loose crystal structures for development of photovoltaic converters is discussed. Use of these semiconductors promises to get low cost solar cells with extremely high radiation stability. A theoretical possibility of creation of photoconverters based on semiconductors of this type is presented. Thin-film heterostructures of intrinsic semiconductors with thickness of the screening length order are shown to have properties, similar to conventional p-n heterojunctions, including photoconverters.

Published in:

Electrical and Electronics Engineering, 2004. (ICEEE). 1st International Conference on

Date of Conference:

8-10 Sept. 2004

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