By Topic

Electromigration in eutectic SnPb solder bumps with Ni/Cu UBM

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Sheng-Hsiang Chiu ; Dept. of Material Sci. & Eng., Nat. Chiao Tung Univ., Hsin-Chu, Taiwan ; Shih-Wei Liang ; Chih Chen ; Lin, S.S.
more authors

This study investigates the electromigration behavior of eutectic SnPb solder bumps with Ni/Cu UBM, in which the thickness of the Ni and Cu layer is 3 μm and 5 μm, respectively. It was found that the SnPb solder joints have better electromigration resistance than that of SnAg bumps with thin film UBM. The thermal characteristic of SnPb solder joints under current stressing was measured by infrared technique. The Joule heating effect was less serious due to the wide Al trace of 100 μm. Besides, a three-dimensional simulation on current density distribution was performed to examine the current crowding behavior in the joint. The results show that the current crowding occurs at the entrance point of the Al trace, which caused higher formation rate of intermetallic compounds there, and thus open failure occurred.

Published in:

Advanced Packaging Materials: Processes, Properties and Interfaces, 2005. Proceedings. International Symposium on

Date of Conference:

16-18 March 2005