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A MOSFET-based model of a class 2 nerve membrane

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2 Author(s)
Kohno, T. ; ERATO Aihara Complexity Modeling Project, Tokyo, Japan ; Aihara, K.

We have constructed a nerve membrane using MOSFET circuitry, which can be a basic element of an FET-based neural system. Its mechanism of action potentials generation is designed to reproduce that of the Hodgkin-Huxley equations. The responses to singlet, doublet, repetitive pulse, and sustained stimuli are analyzed to show that it exhibits similar properties to the Hodgkin-Huxley equations; namely, 1) excitable dynamics with generation of action potentials, 2) the existence of a chaotic response to periodic stimuli, and 3) Class 2 excitability. It is known that Class 2 excitability is generated by an inverted Hopf bifurcation. We have applied Hopf bifurcation theory to our nerve membrane's system equations and have shown a routine for ascertaining whether a certain parameter set generates an inverted Hopf bifurcation.

Published in:

Neural Networks, IEEE Transactions on  (Volume:16 ,  Issue: 3 )

Date of Publication:

May 2005

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