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Theoretical approach to the stoichiometric feature of field emission from AlxGa1-xN

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2 Author(s)
T. S. Choi ; Dept. of Phys., Ulsan Univ., South Korea ; M. S. Chung

The field emission current density j from the ternary alloy AlxGa1-xN is calculated as a function of a stoichiometric composition x for 0≤x≤1. In addition to the doping, the internal field emission is considered to contribute to the carrier concentration n of the conduction band of AlxGa1-xN. A full calculation is made to obtain the exact j from AlxGa1-xN as a function of x and the field F. Then we found the stoichiometric dependence of field emission from AlxGa1-xN by analyzing the effects of both the electron affinity and the carrier concentration.

Published in:

Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International

Date of Conference:

6-10 Sept. 2004