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Effect of CVD-SiO2 film on reliability of GaAs MESFET with Ti/Pt/Au gate metal

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3 Author(s)
Saito, Y. ; Transmission Device R&D Lab, Sumitomo Electr. Ind. Ltd., Yokohama, Japan ; Hashinaga, Tatsuya ; Nakajima, S.

The effect of CVD-SiO2 films on the reliability of GaAs MESFET with Ti/Pt/Au gate metal was investigated. It was found that the mean time to failure (MTTF) of MESFET with 350°C-depositied SiO2 was only about one-seventh of that of the ones with 440°C-SiO2. It was also found that, in the storage test at 300°C for 24 hours, diffusion of Pt into GaAs was accelerated when the SiO2 deposition temperature was lower than 380°C. FT-IR spectra indicated that the lower deposition temperature leads to a higher concentration of the residual hydrogen in SiO2. Thermal differential spectrometry (TDS) demonstrated that hydrogen in SiO2 could migrate even below 300°C. In conclusion, the residual hydrogen in SiO2 causes the degradation phenomena.

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Reliability, IEEE Transactions on  (Volume:54 ,  Issue: 1 )