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Quantum dot superluminescent diodes emitting at 1.3 μm

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5 Author(s)
Rossetti, M. ; Ecole Polytechnique Fed. de Lausanne EPFL, Inst. of Quantum Electron. & Photonics, Lausanne, Switzerland ; Markus, A. ; Fiore, A. ; Occhi, L.
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We report ridge-waveguide superluminescent diodes based on five stacks of self-assembled InAs-GaAs quantum dots. Devices with output powers up to 10 mW emitting around 1.3 μm are demonstrated. Spectral analysis shows a broad emission peak (26-nm full-width at half-maximum) from the dot ground state at low injection, and an additional peak from the excited state at higher bias. Temperature characteristics in the range 10°C-80°C are also reported. The experimental curves are in good agreement with simulations performed using a traveling-wave rate equation model.

Published in:

Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 3 )

Date of Publication:

March 2005

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