Referenced Items are not available for this document.
We report ridge-waveguide superluminescent diodes based on five stacks of self-assembled InAs-GaAs quantum dots. Devices with output powers up to 10 mW emitting around 1.3 μm are demonstrated. Spectral analysis shows a broad emission peak (26-nm full-width at half-maximum) from the dot ground state at low injection, and an additional peak from the excited state at higher bias. Temperature characteristics in the range 10°C-80°C are also reported. The experimental curves are in good agreement with simulations performed using a traveling-wave rate equation model.
Published in:
Photonics Technology Letters, IEEE
(Volume:17
,
Issue:
3
)
Date of Publication: March 2005
- Page(s):
- 540 - 542
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 8321485
- Digital Object Identifier :
- 10.1109/LPT.2004.840997
- Date of Current Version :
- 22 February 2005
- Issue Date :
- March 2005
- Sponsored by :
- IEEE Photonics Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
