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660-nm GaInP-AlGaInP quantum-well laser diode structures with reduced vertical beam divergence angle

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3 Author(s)
Cho, Soohaeng ; Photonics Program Team, Samsung Adv. Inst. of Technol., Gyeonggi-Do, South Korea ; Park, YongJo ; Kim, Youngmin

We propose a new layer design for 660-nm GaInP-AlGaInP quantum-well laser diodes employing a two-step n-cladding layer and demonstrate the feasibility of achieving a reduced vertical beam divergence angle of as low as 14.8° with a relatively small decrease in the optical confinement factor by theoretical simulations and experimental observations.

Published in:

Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 3 )

Date of Publication:

March 2005

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