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Characteristics of a high-speed passively mode-locked surface-emitting semiconductor InGaAs laser diode

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7 Author(s)
Qiang Zhang ; Dept. of Phys., Brown Univ., Providence, RI, USA ; Jasim, K. ; Nurmikko, A.V. ; Ippen, E.
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We have studied the performance of the recently demonstrated high-speed passively mode-locked 980-nm vertical cavity diode lasers (pulsewidth down to τp∼15 ps, repetition rate up to 15 GHz) by investigating the dynamics of the saturable p-i-n multiple quantum well InGaAs absorber. The impact of the absorber on the noise characteristics of these new compact short pulse sources is also reported.

Published in:

Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 3 )

Date of Publication:

March 2005

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