Referenced Items are not available for this document.
This paper discusses the 6 transistor SRAM cell based on the complementary tunneling field effect transistors (TFET). The low voltage characteristics of the cell are presented. The static noise margin (SNM) is used to compare the TFET cell with the standard CMOS memory cell. Furthermore the sensitivity versus single-event-upset (SEU) caused by radiation is investigated.
Published in:
Nanotechnology, 2004. 4th IEEE Conference on
Date of Conference: 16-19 Aug. 2004
- Page(s):
- 402 - 404
- Print ISBN:
- 0-7803-8536-5
- INSPEC Accession Number:
- 8411781
- Digital Object Identifier :
- 10.1109/NANO.2004.1392364
- Product Type:
- Conference Publications
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